DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY

被引:9
|
作者
Lee, Hyeon-Keun [1 ]
Kim, Do Kyung [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源
MODERN PHYSICS LETTERS B | 2009年 / 23卷 / 31-32期
关键词
Raman spectroscopy; thermal conductivity; aluminum nitride; heat treatment; ALUMINUM NITRIDE;
D O I
10.1142/S0217984909021934
中图分类号
O59 [应用物理学];
学科分类号
摘要
Calcium fluoride additive was used to produce high thermal conductivity AlN ceramics which has no grain boundary phase. Thermal conductivity of AlN is determined by the point defect, represented as oxygen related defect, with in the AlN grain. The defect density characterization of high thermal conductivity CaF2 doped AlN ceramics after heat treatment was conducted by Raman spectroscopy. As measure Raman linewidth broadening, the point defect density variation after heat treatment and corresponding thermal conductivity change was investigated
引用
收藏
页码:3869 / 3876
页数:8
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