GaNyAs1-x-yBix alloy lattice matched to GaAs with 1.3μm photoluminescence emission

被引：22
作者：
Huang, W [1 ]
Yoshimoto, M [1 ]
Takehara, Y [1 ]
Saraie, J [1 ]
Oe, K [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 10B期
关键词：
GaNyAs(1-x-y)Bi(x); PL emission; lattice matching; MBE growth; temperature dependence;
D O I：
10.1143/JJAP.43.L1350
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaNyAs1-x-yBix alloy was grown by molecular beam epitaxy. The lattice matching between the GaNyAs1-x-yBix epilayer and the GaAs substrate was achieved by adjusting the N composition used in this experiment. Photoluminescence (PL) at the wavelength of 1.3mum was observed at room temperature for the GaNyAs1-x-yBix epilayer lattice matched to the GaAs substrate. The temperature coefficient of the PL peak energy for this GaNyAs1-x-yBix epilayer in the temperature range of 150-300K was 0.14meV/K which was much smaller than the temperature dependence of the band gap of GalnAsP alloy.
引用
收藏
页码：L1350 / L1352
页数：3
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