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Optical properties of nanocrystalline SnS2 thin films
被引:122
作者:
Panda, S. K.
Antonakos, A.
Liarokapis, E.
Bhattacharya, S.
Chaudhuri, S.
[1
]
机构:
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
[2] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece
[3] Queens Univ Belfast, Microelect Grp, Sch Elect Engn, Belfast BT7 1NN, Antrim, North Ireland
关键词:
thin films;
nanostructures;
semiconductors;
Raman spectroscopy;
optical properties;
TIN SULFIDE MATERIALS;
VAPOR-DEPOSITION;
ABSORPTION-EDGE;
DISULFIDE;
TEMPERATURE;
ADSORPTION;
PRESSURE;
D O I:
10.1016/j.materresbull.2006.06.028
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Thin films of nanocrystalline SnS2 on glass substrates were prepared from solution by dip coating and then sulfurized in H2S (H2S:Ar = 1: 10) atmosphere. The films had an average thickness of 60 nm and were characterized by X-ray diffraction studies, scanning electron microscopy, EDAX, transmission electron microscopy, UV-vis spectroscopy, and Raman spectroscopy. The influence of annealing temperature (150-300 degrees C) on the crystallinity and particle size was studied. The effect of CTAB as a capping agent has been tested. X-ray diffraction analysis revealed the polycrystalline nature of the films with a preferential orientation along the c-axis. Optical transmission spectra indicated a marked blue shift of the absorption edge due to quantum confinement and optical band gap was found to vary from 3.5 to 3.0 eV with annealing temperature. Raman studies indicated a prominent broad peak at similar to 314 cm(-1), which confirmed the presence of nanocrystalline SnS2 phase. (C) 2006 Elsevier Ltd. All rights reserved.
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页码:576 / 583
页数:8
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