共 15 条
Magnetic and Magnetotransport Studies on Ternary Topological Insulator GeBi4Te7
被引:3
作者:

Amaladass, E. P.
论文数: 0 引用数: 0
h-index: 0
机构:
HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Sharma, Shilpam
论文数: 0 引用数: 0
h-index: 0
机构:
HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Satya, A. T.
论文数: 0 引用数: 0
h-index: 0
机构:
HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Mani, Awadhesh
论文数: 0 引用数: 0
h-index: 0
机构:
HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
机构:
[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
来源:
9TH NATIONAL CONFERENCE ON THERMOPHYSICAL PROPERTIES (NCTP-2017)
|
2018年
/
1951卷
关键词:
D O I:
10.1063/1.5031723
中图分类号:
O414.1 [热力学];
学科分类号:
摘要:
Temperature and magnetic field dependence of the transport and magnetic properties of ternary topological insulator GeBi4Te7 have been studied. Magnetization data shows that the sample remains diamagnetic from 300 K down to 2.5 K whereas, resistivity decreases as temperature decreases and reaches a minimum at 210 K. It increases furtherand attains a maximum at 124 K and then decreases upon reducing the temperature. R (T) measured at 0-15 T shows positive magnetoresistance (MR). The calculated MR % at T <50 K is similar to 60 %, and it decreases drastically as temperature increases. At T < 124 K, the density of charge carriers (electrons) deduced from Hall measurements is about similar to 10(19) cm(-3) and it increases by one order upon increasing the temperature to 300 K. The lowering of Dirac point due to the lattice distortion caused by the defects at Bi/Ge sites and pinning of Fermi energy deep into the conduction band is believed to cause the observed non-topological signatures in electronic transport properties.
引用
收藏
页数:4
相关论文
共 15 条
[1]
Quantum coherence phenomenon in disordered Bi2SeTe2 topological single crystal: effect of annealing
[J].
Amaladass, E. P.
;
Devidas, T. R.
;
Sharma, Shilpam
;
Mani, Awadhesh
.
JOURNAL OF PHYSICS-CONDENSED MATTER,
2017, 29 (17)

Amaladass, E. P.
论文数: 0 引用数: 0
h-index: 0
机构:
Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Devidas, T. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Sharma, Shilpam
论文数: 0 引用数: 0
h-index: 0
机构:
Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Mani, Awadhesh
论文数: 0 引用数: 0
h-index: 0
机构:
Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India Indira Gandhi Ctr Atom Res, Condensed Matter Phys Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[2]
Magneto-transport behaviour of Bi2Se3-xTex: role of disorder
[J].
Amaladass, E. P.
;
Devidas, T. R.
;
Sharma, Shilpam
;
Sundar, C. S.
;
Mani, Awadhesh
;
Bharathi, A.
.
JOURNAL OF PHYSICS-CONDENSED MATTER,
2016, 28 (07)

Amaladass, E. P.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India

Devidas, T. R.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India

Sharma, Shilpam
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India

Sundar, C. S.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India

Mani, Awadhesh
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India

Bharathi, A.
论文数: 0 引用数: 0
h-index: 0
机构:
UGC DAE CSR, Kokilamedu 603104, TN, India IGCAR, Mat Sci Grp, Kalpakkam 603102, TN, India
[3]
Topological Insulator Materials
[J].
Ando, Yoichi
.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
2013, 82 (10)

Ando, Yoichi
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[4]
Effect of Sb substitution on the topological surface states in Bi2Se3 single crystals: a magneto-transport study
[J].
Devidas, T. R.
;
Amaladass, E. P.
;
Sharma, Shilpam
;
Mani, Awadhesh
;
Rajaraman, R.
;
Sundar, C. S.
;
Bharathi, A.
.
MATERIALS RESEARCH EXPRESS,
2017, 4 (02)

Devidas, T. R.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Amaladass, E. P.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Sharma, Shilpam
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Mani, Awadhesh
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Rajaraman, R.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Sundar, C. S.
论文数: 0 引用数: 0
h-index: 0
机构:
IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

Bharathi, A.
论文数: 0 引用数: 0
h-index: 0
机构:
UGC DAE Consortium Sci Res, Kokilamedu 603104, Tamil Nadu, India IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[5]
Topological insulators in three dimensions
[J].
Fu, Liang
;
Kane, C. L.
;
Mele, E. J.
.
PHYSICAL REVIEW LETTERS,
2007, 98 (10)

Fu, Liang
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

Kane, C. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

Mele, E. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
[6]
Colloquium: Topological insulators
[J].
Hasan, M. Z.
;
Kane, C. L.
.
REVIEWS OF MODERN PHYSICS,
2010, 82 (04)
:3045-3067

Hasan, M. Z.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Joseph Henry Labs, Dept Phys, Princeton, NJ 08544 USA Princeton Univ, Joseph Henry Labs, Dept Phys, Princeton, NJ 08544 USA

Kane, C. L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA Princeton Univ, Joseph Henry Labs, Dept Phys, Princeton, NJ 08544 USA
[7]
A topological Dirac insulator in a quantum spin Hall phase
[J].
Hsieh, D.
;
Qian, D.
;
Wray, L.
;
Xia, Y.
;
Hor, Y. S.
;
Cava, R. J.
;
Hasan, M. Z.
.
NATURE,
2008, 452 (7190)
:970-U5

Hsieh, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Qian, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Wray, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Xia, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Hor, Y. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Chem, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Cava, R. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Chem, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

Hasan, M. Z.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA
Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton Ctr Complex Mat, Princeton, NJ 08544 USA Princeton Univ, Dept Phys, Joseph Henry Labs Phys, Princeton, NJ 08544 USA
[8]
Effect of nonstoichiometry on the thermoelectric properties of GeBi4Te7
[J].
Kuznetsov, VL
;
Kuznetsova, LA
;
Rowe, DM
.
JOURNAL OF APPLIED PHYSICS,
1999, 85 (06)
:3207-3210

Kuznetsov, VL
论文数: 0 引用数: 0
h-index: 0
机构:
Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales

Kuznetsova, LA
论文数: 0 引用数: 0
h-index: 0
机构:
Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales

Rowe, DM
论文数: 0 引用数: 0
h-index: 0
机构:
Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales
[9]
Topological metal behavior in GeBi2Te4 single crystals
[J].
Marcinkova, A.
;
Wang, J. K.
;
Slavonic, C.
;
Nevidomskyy, Andriy H.
;
Kelly, K. F.
;
Filinchuk, Y.
;
Morosan, E.
.
PHYSICAL REVIEW B,
2013, 88 (16)

Marcinkova, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Wang, J. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Slavonic, C.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Nevidomskyy, Andriy H.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Kelly, K. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Filinchuk, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Catholic Univ Louvain, Inst Condensed Matter & Nanosci, B-1348 Louvain, Belgium Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

Morosan, E.
论文数: 0 引用数: 0
h-index: 0
机构:
Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[10]
Separating the bulk and surface n- to p-type transition in the topological insulator GeBi4-xSbxTe7
[J].
Muff, Stefan
;
von Rohr, Fabian
;
Landolt, Gabriel
;
Slomski, Bartosz
;
Schilling, Andreas
;
Cava, Robert J.
;
Osterwalder, Juerg
;
Dil, J. Hugo
.
PHYSICAL REVIEW B,
2013, 88 (03)

论文数: 引用数:
h-index:
机构:

von Rohr, Fabian
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
Princeton Univ, Dept Chem, Princeton, NJ 08544 USA Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Landolt, Gabriel
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Slomski, Bartosz
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Schilling, Andreas
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Cava, Robert J.
论文数: 0 引用数: 0
h-index: 0
机构:
Princeton Univ, Dept Chem, Princeton, NJ 08544 USA Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Osterwalder, Juerg
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

Dil, J. Hugo
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland