Integrated 1.3μm DFB laser electro-absorption modulator based on identical MQW-double stack active layer with 25GHz small-signal modulation performance

被引：0

作者：

Stegmueller, B ^{[1
]}

Hanke, C ^{[1
]}

机构：

[1] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany

来源：

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

25GHz small signal modulation bandwidth for a 1.31 mum electro-absorption modulator monolithically integrated with a DFB laser diode has been achieved using an identical multiple quantum well-layer structure composed of two different QW types.

引用

页码：516 / 518

页数：3

共 8 条

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