Temperature-independent transport in high-mobility pentacene transistors

被引:757
作者
Nelson, SF [1 ]
Lin, YY
Gundlach, DJ
Jackson, TN
机构
[1] Colby Coll, Dept Phys, Waterville, ME 04901 USA
[2] Penn State Univ, Elect & Mat Proc Res Lab, University Pk, PA 16802 USA
关键词
D O I
10.1063/1.121205
中图分类号
O59 [应用物理学];
学科分类号
摘要
The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials. (C) 1998 American Institute of Physics.
引用
收藏
页码:1854 / 1856
页数:3
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