Ga-terminated β-GaN(001) surface reconstructions studied by scanning tunneling microscopy

被引：5

作者：

Wassermeier, M ^{[1
]}

Yang, H ^{[1
]}

Brandt, O ^{[1
]}

Yamada, A ^{[1
]}

Behrend, J ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

GaN surface reconstruction; STM; MBE; RHEED;

D O I：

10.1016/S0169-4332(97)00507-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reconstruction and topography of the beta-GaN(001) surface are investigated with scanning tunneling microscopy on GaN/GaAs(001) layers grown by molecular beam epitaxy. Two Ga-terminated reconstructions are observed: a (2 X 2)- and a novel (root 10 X root 10)R18.4 degrees-reconstruction. The experimental results of filled and empty state STM images are in good agreement with a simulation based on structure models that include a dimerization of the surface Ga atoms. The formation of the unique (root 10 X root 10)R18.4 degrees-reconstruction is related to the high ionicity of GaN and to steric reasons, not allowing a full Ga coverage of the surface. (C) 1998 Elsevier Science B.V.

引用

页码：181 / 186

页数：6

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