Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

被引：523

作者：

Fu, Chenguang ^{[1
]}

Zhu, Tiejun ^{[1
,2
]}

Liu, Yintu ^{[1
]}

Xie, Hanhui ^{[1
]}

Zhao, Xinbing ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2015年 / 8卷 / 01期

关键词：

LATTICE THERMAL-CONDUCTIVITY; BULK THERMOELECTRICS; HIGH-EFFICIENCY; ALLOYS; TEMPERATURES; CONVERGENCE; TRANSPORT; MODEL; PBTE;

D O I：

10.1039/c4ee03042g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report new p-type FeNb1-xTixSb (0.04 <= x <= 0.24) half-Heusler thermoelectric materials with a maximum zT of 1.1 at 1100 K, which is twice that of the ZrCoSb half-Heusler alloys. The electrical properties are optimized by a tradeoff between the band effective mass and mobility via a band engineering approach. A high content of Ti up to x = 0.2 optimizes the power factor and reduces the lattice thermal conductivity. In view of abundantly available elements, good stability and high zT, FeNb1-xTixSb alloys could be promising materials for high temperature power generation.

引用

页码：216 / 220

页数：5

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Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT &gt; 1

Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1