Photoelectric Properties of Microrelief Organic/Inorganic Semiconductor Heterojunctions

被引：0

作者：

Dmitruk, N. L. ^{[1
]}

Borkovskaya, O. Yu. ^{[1
]}

Naumenko, D. O. ^{[1
]}

Mamontova, I. B. ^{[1
]}

Kotova, N. V. ^{[1
]}

Lytvyn, O. S. ^{[1
]}

Vertsimakha, Ya. I. ^{[2
]}

机构：

[1] NAS Ukraine, Inst Semicond Phys, 45 Nauki Prospect, UA-03028 Kiev, Ukraine

[2] NAS Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

来源：

INTERFACE CONTROLLED ORGANIC THIN FILMS | 2009年 / 129卷

关键词：

ACID DIIMIDE; HETEROSTRUCTURES; FILMS;

D O I：

10.1007/978-3-540-95930-4_37

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of texturing interface on optical and photoelectric properties of organic/inorganic semiconductor heterostructures, based on n-GaAs, has been investigated both for anisotype (with pentacene or lead phthalocyanine) and isotype (with methyl perylene pigment) junctions. The analysis of internal quantum efficiency spectra, calculated from the experimental short-circuit photocurrent and light reflectance spectra, allowed to determine the participation of the OS layer in the formation of heterostructure total photocurrent. Considerable enhancement of the photocurrents, generated in both organic and inorganic semiconductors was found for all the investigated heterojunctions.

引用

页码：225 / 227

页数：3

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