Surface Induced Asymmetry of Acceptor Wave Functions

被引：22

作者：

Celebi, C. C. ^{[1
]}

Garleff, J. K. ^{[1
]}

Silov, A. Yu. ^{[1
]}

Yakunin, A. M. ^{[1
]}

Koenraad, P. M. ^{[1
]}

Van Roy, W. ^{[2
]}

Tang, J. -M. ^{[3
]}

Flatte, M. E. ^{[4
,5
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Inter Univ Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] IMEC, B-3001 Louvain, Belgium

[3] Univ New Hampshire, Dept Phys, Durham, NH 03824 USA

[4] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[5] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 08期

关键词：

SCANNING-TUNNELING-MICROSCOPY; GAAS; SEMICONDUCTORS; MN;

D O I：

10.1103/PhysRevLett.104.086404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurements of the local density of states of individual acceptors in III-V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III-V materials.

引用

页数：4

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