Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene

被引：7

作者：

Park, Byoungnam ^{[1
]}

Whitham, Kevin ^{[2
]}

Bian, Kaifu ^{[1
]}

Lim, Yee-Fun ^{[3
]}

Hanrath, Tobias ^{[1
]}

机构：

[1] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Dept Appl & Engn Phys, Ithaca, NY 14853 USA

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2014年 / 16卷 / 47期

基金：

美国国家科学基金会;

关键词：

DOT SOLAR-CELLS; QUANTUM DOTS; ELECTRON INJECTION; PHOTOVOLTAICS; PHOTODETECTORS; RECOMBINATION;

D O I：

10.1039/c4cp01507j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

引用

页码：25729 / 25733

页数：5

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