Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films

被引：40

作者：

Pan, Xinqiang ^{[1
]}

Shuai, Yao ^{[1
,2
]}

Wu, Chuangui ^{[1
,2
]}

Luo, Wenbo ^{[1
,2
]}

Sun, Xiangyu ^{[1
]}

Zeng, Huizhong ^{[1
]}

Zhou, Shengqiang ^{[3
]}

Boettger, Roman ^{[3
]}

Ou, Xin ^{[4
]}

Mikolajick, Thomas ^{[5
,6
]}

Zhang, Wanli ^{[1
,2
]}

Schmidt, Heidemarie ^{[7
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, Collaborat Innovat Ctr Elect Mat & Devices, Chengdu 610054, Peoples R China

[3] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[5] Namlab gGmbH, Nothnitzer Str 64, D-01187 Dresden, Germany

[6] Tech Univ Dresden, Inst Semicond & Microsyst, Nothnitzer Str 64, D-01187 Dresden, Germany

[7] Tech Univ Chemnitz, Dept Mat Nanoelect, Fac Elect Engn & Informat Technol, D-09126 Chemnitz, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 03期

基金：

中国国家自然科学基金;

关键词：

LITHIUM-NIOBATE; RESISTANCE; EVOLUTION; SRTIO3;

D O I：

10.1063/1.4940372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the resistive switching properties of ion-exfoliated LiNbO3 thin films. After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and the oxygen gas bubbles can be eliminated by tuning the annealing conditions in order to prevent the destruction of top electrodes. The thin films show rectifying filamentary resistive switching after forming, which is interpreted by a simplified model that the local filament does not penetrate throughout the LiNbO3 thin film, resulting in asymmetric contact barriers at the two interfaces. The well controlled electro-forming step and the highly reproducible switching properties are attributed to the more homogeneous distribution of defects in single crystalline materials and the specific geometry of filament. (C) 2016 AIP Publishing LLC.

引用

页数：5

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