Low-temperature MBE-grown GaBiAs layers for terahertz optoelectronic applications

被引：8

作者：

Pacebutas, Vaidas ^{[1
]}

Bertulis, Klemensas ^{[1
]}

Biciunas, Andrius ^{[1
]}

Krotkus, Arunas ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01180 Vilnius, Lithuania

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12 | 2009年 / 6卷 / 12期

关键词：

D O I：

10.1002/pssc.200982538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium bismide arsenide epitaxial layers were grown by molecular-beam-epitaxy at low substrate temperatures and investigated for their suitability in terahertz optoelectronic applications. Optical pump-terahertz probe measurements on these layers have shown that carrier dynamics can be described using two characteristic times. The faster decay component has characteristic times shorter than 1 ps, whereas the slower component decays in several tens of picoseconds. Fitting the electron lifetimes dependence on optical excitation level the electron trapping cross-section and trap density were determined. The possible mechanism of carrier recombination was discussed. The photoconductive terahertz emitters and detectors made from GaBiAs layers have been manufactured and used in time-domain spectroscopy system with a signal bandwidth larger than 4.5 THz. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2649 / 2651

页数：3

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