Formation and STM tip-induced reduction of ultra thin SnO film on Au(111)

被引:7
|
作者
Yan, JW
Xie, ZX
Cao, ZX
Zhou, CJ
Kang, JY
Mao, BW [1 ]
机构
[1] Xiamen Univ, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Dept Chem, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
关键词
D O I
10.1016/S0009-2614(03)00649-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This Letter presents a study on the oxidation of electrochemically deposited Sn monolayer on Au(1 1 1) surface and STM tip-induced reduction of as-prepared ultra thin SnO film. A threshold bias of 0.6 V (tip negative) at a low tunneling current of similar to50 pA is required to image the as-formed SnO thin film by STM, typical of a semiconductor characteristic. Increasing the tunneling current to similar to2 nA leads to the reduction of the SnO back to Sn. Based on the energy level calculation for the SnO, a mechanism involving direct electron tunneling is proposed to account for the tip-induced reduction. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:575 / 579
页数:5
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