This Letter presents a study on the oxidation of electrochemically deposited Sn monolayer on Au(1 1 1) surface and STM tip-induced reduction of as-prepared ultra thin SnO film. A threshold bias of 0.6 V (tip negative) at a low tunneling current of similar to50 pA is required to image the as-formed SnO thin film by STM, typical of a semiconductor characteristic. Increasing the tunneling current to similar to2 nA leads to the reduction of the SnO back to Sn. Based on the energy level calculation for the SnO, a mechanism involving direct electron tunneling is proposed to account for the tip-induced reduction. (C) 2003 Elsevier Science B.V. All rights reserved.
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CNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama, Nara, Japan
Univ Toulouse, CNRS, CEMES, Toulouse, FranceCNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Calupitan, Jan Patrick Dela Cruz
Galangau, Olivier
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CNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama, Nara, JapanCNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Galangau, Olivier
Guillermet, Olivier
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Univ Toulouse, CNRS, CEMES, Toulouse, FranceCNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Guillermet, Olivier
Coratger, Roland
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Univ Toulouse, CNRS, CEMES, Toulouse, FranceCNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Coratger, Roland
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Nakashima, Takuya
Rapenne, Gwenael
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CNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France
Univ Toulouse, CNRS, CEMES, Toulouse, FranceCNRS, CEMES, Int Collaborat Lab, NAIST, BP 94347, F-31055 Toulouse, France