Non-equilibrium electron transport in degenerate nitride heterostructures - dynamic screening effects

被引:4
作者
Anderson, DR
Babiker, M [1 ]
Bennett, CR
Probert, MIJ
机构
[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[2] QinetiQ, Malvern WR14 3RS, Worcs, England
关键词
GaN; heterostructure; screening; electric transport;
D O I
10.1016/S1386-9477(02)00795-6
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon-plasmon coupling. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:272 / 275
页数:4
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