Realization and optical characterization of etched mirror facets in GaN cavities

被引：28
作者：
Binet, F
Duboz, JY
Laurent, N
Bonnat, C
Collot, P
Hanauer, F
Briot, O
Aulombard, RL
机构：
[1] Thomson CSF, LCR, F-91404 Orsay, France
[2] Univ Montpellier 2, CNRS, GES, F-34095 Montpellier 3, France
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期
关键词：
D O I：
10.1063/1.120934
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air-GaN interface. This demonstrates the high quality of the etched mirror facets. (C) 1998 American Institute of Physics.
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页码：960 / 962
页数：3
相关论文
共 10 条
  • [1] CHARACTERISTICS OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GALLIUM NITRIDE
    ADESIDA, I
    PING, AT
    YOUTSEY, C
    DOW, T
    KHAN, MA
    OLSON, DT
    KUZNIA, JN
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (07) : 889 - 891
  • [2] Optimization of the MOVPE growth of GaN on sapphire
    Briot, O
    Alexis, JP
    Tchounkeu, M
    Aulombard, RL
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 147 - 153
  • [3] Realization of optically pumped second-order GaInN-distributed-feedback lasers
    Hofmann, R
    Gauggel, HP
    Griesinger, UA
    Grabeldinger, H
    Adler, F
    Ernst, P
    Bolay, H
    Harle, V
    Scholz, F
    Schweizer, H
    Pilkuhn, MH
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2068 - 2070
  • [4] Gain spectroscopy on InGaN/GaN quantum well diodes
    Kuball, M
    Jeon, ES
    Song, YK
    Nurmikko, AV
    Kozodoy, P
    Abare, A
    Keller, S
    Coldren, LA
    Mishra, UK
    DenBaars, SP
    Steigerwald, DA
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (19) : 2580 - 2582
  • [5] KURAI S, 1996, JPN J APPL PHYS, V35, P77
  • [6] Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Sugimoto, Y
    Kiyoku, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (07) : 868 - 870
  • [7] Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Sugimoto, Y
    Kiyoku, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (05) : 616 - 618
  • [8] STUDY OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAN USING HCL-GAS
    PING, AT
    ADESIDA, I
    KHAN, MA
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1250 - 1252
  • [9] DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
    SHAKLEE, KL
    LEHENY, RF
    [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 475 - &
  • [10] THOMNPSON GHB, 1980, PHYSICS SEMICONDUCTO
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