Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier

被引：46
作者：
Sasaki, Tomoyuki [1 ]
Oikawa, Tohru [1 ]
Suzuki, Toshio [2 ]
Shiraishi, Masashi [3 ]
Suzuki, Yoshishige [3 ]
Noguchi, Kiyoshi [1 ]
机构：
[1] TDK Corp, SQ Res Ctr, Nagano 3858555, Japan
[2] Akita Res Inst Adv Technol, AIT, Akita 0101623, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2010年 / 46卷 / 06期
关键词：
Electrical spin detection; electrical spin injection; MgO tunnel burrier; silicon spintronics; SEMICONDUCTOR; METAL;
D O I：
10.1109/TMAG.2010.2045347
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the evidence of electrical spin injection into silicon (Si) using the Fe/MgO tunnel barrier by the following two methods: 1) non-local (NL) four-terminal magnetoresistance (MR) scheme with their respective corresponding ferromagnetic (FM) electrode and 2) Hanle-type spin precession scheme. These results are compatible and in agreement with each other. The spin injection signals in the non-local scheme were observed up to 150 K, and the spin diffusion length (lambda(N)) was estimated to be 2.8 mu m at 8 K. The experimental data completely matches every detail of the Hanle measurements equation, and spin lifetime (tau) was estimated to be 9.44 ns at 8 K. We will be able to discuss the physical properties of a pure spin current in silicon by this compelling data.
引用
收藏
页码：1436 / 1439
页数：4
相关论文
共 16 条
[1]   Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier [J].
Ando, Y. ;
Hamaya, K. ;
Kasahara, K. ;
Kishi, Y. ;
Ueda, K. ;
Sawano, K. ;
Sadoh, T. ;
Miyao, M. .
APPLIED PHYSICS LETTERS, 2009, 94 (18)
[2]   Electronic measurement and control of spin transport in silicon [J].
Appelbaum, Ian ;
Huang, Biqin ;
Monsma, Douwe J. .
NATURE, 2007, 447 (7142) :295-298
[3]   THEORY OF THE EFFECT OF SPIN-ORBIT COUPLING ON MAGNETIC RESONANCE IN SOME SEMICONDUCTORS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1954, 96 (02) :266-279
[4]   Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor -: art. no. 184420 [J].
Fert, A ;
Jaffrès, H .
PHYSICAL REVIEW B, 2001, 64 (18)
[5]   Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices [J].
Huang, Biqin ;
Jang, Hyuk-Jae ;
Appelbaum, Ian .
APPLIED PHYSICS LETTERS, 2008, 93 (16)
[6]   Coherent spin transport through a 350 micron thick silicon wafer [J].
Huang, Biqin ;
Monsma, Douwe J. ;
Appelbaum, Ian .
PHYSICAL REVIEW LETTERS, 2007, 99 (17)
[7]   Electrical detection of spin precession in a metallic mesoscopic spin valve [J].
Jedema, FJ ;
Heersche, HB ;
Filip, AT ;
Baselmans, JJA ;
van Wees, BJ .
NATURE, 2002, 416 (6882) :713-716
[8]   Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact [J].
Jonker, Berend T. ;
Kioseoglou, George ;
Hanbicki, Aubrey T. ;
Li, Connie H. ;
Thompson, Phillip E. .
NATURE PHYSICS, 2007, 3 (08) :542-546
[9]   Electrical Spin Injection into Silicon Using MgO Tunnel Barrier [J].
Sasaki, Tomoyuki ;
Oikawa, Tohru ;
Suzuki, Toshio ;
Shiraishi, Masashi ;
Suzuki, Yoshishige ;
Tagami, Katsumichi .
APPLIED PHYSICS EXPRESS, 2009, 2 (05)
[10]   Robustness of Spin Polarization in Graphene-Based Spin Valves [J].
Shiraishi, Masashi ;
Ohishi, Megumi ;
Nouchi, Ryo ;
Mitoma, Nobuhiko ;
Nozaki, Takayuki ;
Shinjo, Teruya ;
Suzuki, Yoshishige .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (23) :3711-3716
12