Dislocation content of micropipes in SiC

被引：74
作者：
Heindl, J
Dorsch, W
Strunk, PP
Muller, SG
Eckstein, R
Hofmann, D
Winnacker, A
机构：
[1] Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch Werkstoffe Elektrotech, D-91058 Erlangen, Germany
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.80.740
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon carbide, a potentially powerful device material, suffers from microscopic hollow defects called micropipes. Their nature is not satisfactorily clarified yet. Our analysis shows that they are hollow core dislocations according to Frank's model, but contain dislocations of mixed type. [S0031-9007(97)05011-4].
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收藏
页码：740 / 741
页数：2
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