2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

被引:24
作者
Xia, Yan [1 ]
Wang, Jing [1 ]
Chen, Rui [1 ]
Wang, Hongbo [1 ]
Xu, Hang [1 ]
Jiang, Changzhong [1 ]
Li, Wenqing [1 ]
Xiao, Xiangheng [1 ,2 ]
机构
[1] Wuhan Univ, Hubei Nucl Solid Phys Key Lab, Dept Phys, Wuhan 430072, Peoples R China
[2] Hubei Yangtze Memory Labs, Wuhan 430205, Peoples R China
基金
中国国家自然科学基金;
关键词
2D heterostructure; chemical vapor deposition; oxygen plasma; resistive switching; MOBILITY;
D O I
10.1002/aelm.202200126
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi2O2Se) for excellent properties in multi-performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi2O2Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi2O2Se/Bi2SeOx nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi2O2Se nanosheets is endowed through the method of O-2 plasma treatment, which makes it feasible for developing its application in the RRAM.
引用
收藏
页数:8
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