A Novel Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

被引：14

作者：

Zhu, Zhengyong ^{[1
]}

Zhu, Huilong ^{[1
]}

Xu, Miao ^{[1
]}

Zhong, Jian ^{[1
]}

Zhao, Chao ^{[1
]}

Chen, Dapeng ^{[1
]}

Ye, Tianchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 06期

关键词：

Band-to-band tunneling (BTBT); fin; novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET); subthreshold swing (SS); tunnel field-effect transistor (TFET); FET; ENERGY;

D O I：

10.1109/TNANO.2014.2342765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET) is proposed and investigated by simulation. In this structure, a narrow fin is placed at the middle of a conventional p(+) -i-n(+) tunnel field-effect transistor, and two separate gates formed on left and right sides of the fin are used to control the channel. The FinEHBTFET achieves drive current when band-to-band tunneling happens between the bias-induced electron-hole bilayer at the two sides of the fin. The FinEHBTFET shows a high I-on/I-off ratio more than 10(6), and an average SS of 3 mV/dec over three decades of drain current.

引用

页码：1133 / 1137

页数：5

共 19 条

[1] [Anonymous], P IEEE INT EL DEV M
[2] [Anonymous], 2013, SYN TCAD MAN VER H 2
[3] Double-gate tunnel FET with high-κ gate dielectric
Boucart, Kathy
Mihai Ionescu, Adrian
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) : 1725 - 1733
[4] Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing
Chang, Hsu-Yu
Adams, Bruce
Chien, Po-Yen
Li, Jiping
Woo, Jason C. S.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 92 - 96
[5] CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON
FOSSUM, JG
MERTENS, RP
LEE, DS
NIJS, JF
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 569 - 576
[6] Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature
Gandhi, Ramanathan
Chen, Zhixian
Singh, Navab
Banerjee, Kaustav
Lee, Sungjoo
[J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) : 437 - 439
[7] Han G., 2011, APPL PHYS LETT, V98
[8] Tunnel field-effect transistors as energy-efficient electronic switches
Ionescu, Adrian M.
Riel, Heike
[J]. NATURE, 2011, 479 (7373) : 329 - 337
[9] Ultra-high aspect-ratio FinFET technology
Jovanovic, Vladimir
Suligoj, Tomislav
Poljak, Mirko
Civale, Yann
Nanver, Lis K.
[J]. SOLID-STATE ELECTRONICS, 2010, 54 (09) : 870 - 876
[10] The electron-hole bilayer tunnel FET
Lattanzio, Livio
De Michielis, Luca
Ionescu, Adrian M.
[J]. SOLID-STATE ELECTRONICS, 2012, 74 : 85 - 90

← 1 2 →