Investigation on 3.3 kV-50 A IGBT protection against over-voltage conditions

被引：0

作者：

Flores, D. ^{[1
]}

Hidalgo, S. ^{[1
]}

Rebollo, J. ^{[1
]}

Caramel, C. ^{[2
]}

Sanchez, J. L. ^{[2
]}

Legal, J. ^{[2
]}

Austin, P. ^{[2
]}

Imbernon, E. ^{[2
]}

机构：

[1] CSIC, CNM, IMB, Campus UAB, Barcelona 08193, Spain

[2] CNRS, Lab Analse Architecture DES Syst LAAS, F-31007 Toulouse, France

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

IGBT; high power discrete device; traction application;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper deals with the design and fabrication of monolithically integrated voltage sensors with 3.3 kV IGBTs. Firstly, the sensor concept is introduced, and experimental validation on 600 V IGBTs is presented. Guidelines for the design of a 3.3kV IGBT including the reported anode voltage and current sensors are provided together with its process fabrication.

引用

页码：5161 / 5167

页数：7

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