Growth and characterization of Cu2ZnSnS4 and Cu2ZnSnSe4 thin films for photovoltaic applications

被引：0

作者：

Friedlmeier, TM

Dittrich, H

Schock, HW

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch, D-70565 Stuttgart, Germany

来源：

TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The quaternary compounds Cu2ZnSnS4 and Cu2ZnSnSe4 crystallize in the kesterite structure and they are interesting for thin-film solar cell devices. We describe the growth and characterization of kesterite-type thin films synthesized by thermal evaporation of the elements and binary chalcogenides in high vacuum. The film composition and grain size depend to a large extent on the substrate temperature. X-ray diffraction analysis indicates formation of the ordered kesterite structure. A copper-tin chalcogenide is the only ternary compound found in this quaternary system. The resistivity of KCN-etched films ranges between 1 and 100 Omega cm for Zn-rich films, and it varies greatly for Sn-rich films.

引用

页码：345 / 348

页数：4