Self-organized CdSe quantum dots on (100)ZnSe/GaAs surfaces grown by metalorganic molecular beam epitaxy

II-VI semiconductor low-dimensional structures, quantum dots, have been grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE). Before the heteroepitaxial growth, atomically flat, As-stabilized GaAs surfaces were prepared by high-temperature As cleaning using tris-dimethylamino-arsenic (TDMAAs). CdSe thin films deposited on (100)ZnSe/GaAs surfaces have been investigated with atomic force microscopy (AFM) and were found to form three-dimensional islands with rather uniform size distribution. A large mismatch (similar to 7%) of lattice constants between CdSe and ZnSe pseudomorphically grown on GaAs possibly results in the Stranski-Krastanov growth mode. CdSe quantum dots with a diameter of 97 +/- 11 nm were successfully formed at 350 degrees C.