Magnetic characterization of CoFeB/MgO and CoFe/MgO interfaces

The use of CoFeB ferromagnetic electrodes in place of CoFe has been shown to significantly increase the tunneling magnetoresistance (TMR) of MgO based magnetic tunnel junctions (MTJs). By using soft x-ray scattering techniques, we show that the behavior of the magnetic moments located at the CoFe-MgO interface are drastically different from the rest of the CoFe film, whereas the magnetic response of the CoFeB-MgO interfacial moments is coherent with the film's bulk. Our results support the view that the high TMR values observed in MgO based MTJs with CoFeB electrodes are due to the uniform magnetic response of the entire CoFeB electrode including the MgO interfacial moments. (c) 2007 American Institute of Physics.