Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings

被引：23

作者：

Hanke, M.

Mazur, Yu. I.

Marega, E., Jr.

AbuWaar, Z. Y.

Salamo, G. J.

Schaefer, P.

Schmidbauer, M.

机构：

[1] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[3] Humboldt Univ, D-12489 Berlin, Germany

[4] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.2760191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated a shape transformation during the vertical stacking of InGaAs quantum rings (QRs) on GaAs(001). Samples have been grown by means of molecular beam epitaxy. The initial QR layer exhibits nearly round-shaped, flat disks. Especially for a very thin spacer layer of 2 nm, the topmost QRs in a twofold stack tend to be of ellipsoidal shape with preferential elongation along the [110] direction. Grazing incidence diffraction and corresponding x-ray scattering simulations prove an asymmetry in the shape of the buried QRs with respect to different < 110 > directions. This clearly indicates a significant shape transformation during the overgrowth process from circular toward ellipsoidal QRs. (C) 2007 American Institute of Physics.

引用

页数：3

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