9.5 % SCANDIUM DOPED ALN PMUT COMPATIBLE WITH PRE-PROCESSED CMOS SUBSTRATES

被引:26
作者
Ledesma, Eyglis [1 ]
Zamora, Ivan [1 ]
Uranga, Aranbca [1 ]
Barniol, Nuria [1 ]
机构
[1] Univ Autonoma Barcelona, Elect Engn Dept, Barcelona 08193, Spain
来源
2021 34TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2021) | 2021年
关键词
AlScN; MEMs-on-CMOS; piezoelectric coefficients; PMUT; Scandium; ultrasound transducer;
D O I
10.1109/MEMS51782.2021.9375359
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an 80 mu m squared piezoelectric micromachined ultrasonic transducer (PMUT) using 9.5 % scandium-doped aluminum nitride (AlScN). The improvement in the effective piezoelectric coefficient (e(31,f)) and consequently in the membrane displacement was demonstrating according with the FEM simulation. The proposed device has a high piezoelectric coefficient factor (k(t)(2)) in air, 2.76 %, and also in liquid environment, 1.12 %. The output pressure normalized at 1.5 mm in Fluorinert gives 12.57 kPa/V/mm(2), similar to 9 times higher than 7x7 AlScN array (1.4 kPa/V/mm(2)). Pulse-echo experiment was validated with a single PMUT considering as reflected surface the air-liquid interface.
引用
收藏
页码:887 / 890
页数:4
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