Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen

被引：4

作者：

Nakazawa, Hideki ^{[1
]}

Nakamura, Kazuki ^{[1
]}

Osanai, Hiroya ^{[1
]}

Sasaki, Yuya ^{[1
]}

Koriyama, Haruto ^{[1
]}

Kobayashi, Yasuyuki ^{[1
]}

Enta, Yoshiharu ^{[1
]}

Suzuki, Yushi ^{[1
]}

Suemitsu, Maki ^{[2
]}

机构：

[1] Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, 3 Bunkyo, Aomori 0368561, Japan

[2] Tohoku Univ, Res Inst Elect Commun, 2-1-1 Katahira, Aoba-ku, Sendai 9800812, Japan

来源：

关键词：

Diamond-like carbon; Silicon; Nitrogen; Hydrogen; Chemical vapor deposition; Postdeposition annealing; A-C-H; AMORPHOUS-CARBON; THIN-FILMS; DLC FILMS; DEPOSITION TEMPERATURE; NITRIDE FILMS; RAMAN; SPECTROSCOPY; FRICTION; SPECTRA;

D O I：

10.1016/j.diamond.2021.108809

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have deposited silicon and nitrogen doped diamond-like carbon (Si-N-DLC) films via plasma-enhanced chemical vapor deposition using H2 as a dilution gas and investigated the annealing effects on their structure, chemical bonding, and mechanical, optical, and electrical properties. The internal stress decreased with increasing annealing temperature, which increased the critical load. For the Si-N-DLC films annealed at 347-490 degrees C, sp2 C clustering was almost suppressed, and the amount of bound hydrogen increased. The optical bandgap of the Si-N-DLC films changed little even at 490 degrees C. Si-N-DLC/p-type Si heterojunctions annealed at 270 degrees C and 347 degrees C provided higher rectification ratios than heterojunctions annealed at different temperatures. The improvement in the current-voltage characteristics of these heterojunctions was probably due to the reduction of defects in the Si-N-DLC films by the annealing.

引用

页数：12

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