Variable temperature STM studies of the adsorption of oxygen on the Si(111)-7 x 7 surface

被引：25

作者：

Mayne, AJ ^{[1
]}

Rose, F ^{[1
]}

Comtet, G ^{[1
]}

Hellner, L ^{[1
]}

Dujardin, G ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Photophys Mol Lab, UPR3361, F-91405 Orsay, France

来源：

SURFACE SCIENCE | 2003年 / 528卷 / 1-3期

关键词：

scanning tunneling microscopy; oxidation; silicon; semiconducting surfaces; adsorption kinetics;

D O I：

10.1016/S0039-6028(02)02622-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The scanning tunnelling microscope (STM) has been used to study the adsorption at room (300 K) and low (30 K) temperature of oxygen on the Si(1 1 1)-7 x 7 surface. Subsequently, STM manipulation has been used to find out which of the observed sites can be. modified (displacement, transformation, desorption). It was found that the adsorption is quite different at 30 K compared to 300 K and that the manipulation at room temperature is essential in the identification of the sites. These results are in general agreement with recent conclusions from theoretical work [Phys. Rev. Lett. 84 (2000),1724] and synchrotron radiation experiments [Phys. Rev. B 65 (2002) 035315]. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：132 / 137

页数：6

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