InN quantum dots grown on GaN (0001) by molecular beam epitaxy

被引：5

作者：

Dimakis, E. ^{[1
,2
]}

Georgakilas, A. ^{[1
,2
]}

Iliopoulos, E. ^{[1
,2
]}

Tsagaraki, K. ^{[1
]}

Delimitis, A. ^{[4
]}

Komninou, Ph. ^{[4
]}

Kirmse, H. ^{[5
]}

Neumann, W. ^{[5
]}

Androulidaki, M. ^{[2
]}

Pelekanos, N. T. ^{[2
,3
]}

机构：

[1] FORTH, IESL, Microelect Res Grp, POB 1527, GR-71110 Iraklion, Greece

[2] Univ Crete, Dept Phys, Iraklion 71003, Greece

[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece

[4] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[5] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671613

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth properties of InN quantum dots on GaN (0001) surfaces by molecular beam epitaxy are being investigated. The dependence of the dimensions and density of the dots on the nucleation temperature and their evolution during growth at a constant substrate temperature are described. It is shown that both dimensions and density can be accurately controlled through nucleation temperature and deposition time. In the ranee from 400 degrees C to 450 degrees C, the formation of InN quantum dot structures of small dimensions and high density is feasible. InN dots with less than 3nm height, less than 22 nm diameter and with density higher than 1.7x10(11) cm(-2) have been obtained. Finally, vertical alignment of dots was observed for a multi-period InN quantum dot structure in GaN matrix, grown at 430 degrees C. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3983 / +

页数：2

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