Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature

被引：11

作者：

Abderrahmane, Abdelkader ^{[1
]}

Ko, Pil Ju ^{[2
]}

Okada, Hiroshi ^{[2
]}

Sato, Shin-Ichiro ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Sandhu, Adarsh ^{[2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst, Toyohashi, Aichi 4418580, Japan

[3] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 11期

关键词：

AlGaN/GaN heterostructures; two-dimensional electron gas; micro-Hall sensors; proton irradiation; weak localization; magnetoresistance;

D O I：

10.1109/LED.2014.2358613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The longitudinal and transverse magnetoresistances of AlGaN/GaN heterostructure-based micro-Hall sensors were compared with samples irradiated with protons with an energy of 380 keV and fluence of 10(14) (protons/cm(2)). Increases in the elastic and inelastic scattering were deduced from weak localization behavior in both samples. The AlGaN/GaN micro-Hall sensors showed stable magnetic sensitivity in non and irradiated samples and increased resistivity after proton irradiation yielded an enhanced magnetoresistance sensitivity in nonirradiated sensors from 160 to 417 VA(-1)T(-1). The minimum detectable magnetic field of irradiated micro-Hall sensors determined from magneto-voltage measurements at similar to 4 K was similar to the minimum detectable magnetic field in the nonirradiated sensors.

引用

页码：1130 / 1132

页数：3

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