Formation of single domain state and spontaneous backswitching in SBN single crystal

被引：9

作者：

Kolchina, E. A. ^{[1
]}

Neradovskiy, M. M. ^{[1
,2
]}

Shikhova, V. A. ^{[1
]}

Pelegov, D. V. ^{[1
]}

Shur, V. Ya. ^{[1
]}

Ivleva, L. I. ^{[3
]}

Dec, J. ^{[4
]}

机构：

[1] Ural Fed Univ, Inst Nat Sci, Ekaterinburg, Russia

[2] Univ Nice Sophia Antipolis, Lab Condensed Matter Phys, F-06189 Nice, France

[3] RAS, Prokhorov Gen Phys Inst, Moscow, Russia

[4] Univ Silesia, Inst Mat Sci, Katowice, Poland

来源：

FERROELECTRICS | 2016年 / 496卷 / 01期

关键词：

Relaxor ferroelectrics; single domain state; spontaneous backswitching; piezoresponse force microscopy; strontium-barium niobate; BARIUM NIOBATE CRYSTALS; LITHIUM-NIOBATE; GENERATION; EVOLUTION; GROWTH; FIELD; RAMAN;

D O I：

10.1080/00150193.2016.1155032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of the single domain state and spontaneous backswitching have been studied in polar cut single crystals of relaxor ferroelectric strontium-barium niobate SrxBa1-xNb2O6 with x = 0.61. The piezoresponse force microscopy has been used for domain visualization. Two methods of creation of the single domain state were applied: (1) cyclic switching below freezing temperature and (2) cooling from the temperature corresponding to relaxor phase to room temperature in constant field. The domain structure, appearing as a result of spontaneous backswitching after fast removal of the external field, have been revealed and analyzed.

引用

收藏

页码：149 / 156

页数：8

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