Modeling the pressure dependence of DC bias voltage in asymmetric, capacitive RF sheaths

被引：13

作者：

Chandhok, M ^{[1
]}

Grizzle, JW

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

[2] Univ Michigan, Elect & Mfg Control Syst Lab, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1998年 / 26卷 / 02期

基金：

美国国家科学基金会;

关键词：

asymmetric geometry; capacitively coupled RF glow discharge; dc bias voltage; reference cell; RF sheath model; RIE;

D O I：

10.1109/27.669625

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A semianalytical model for capacitively coupled radio frequency (RF) sheaths of asymmetric (unequal electrode area) systems has been developed, It can be applied in the high-frequency (omega > omega(pi)) regime at different pressures, An analytical approximation to the pressure-dependent ion density profile is used. The time-varying electric field and potential within the sheath are obtained by solving Poisson's equation. The current balance and zero net de current conditions are applied to solve for the RF sheath parameters and de bias voltage. The de voltage ratio between the powered and grounded electrode sheaths increases as the pressure decreases, which results in a larger de bias voltage at lower pressures.

引用

页码：181 / 189

页数：9

共 32 条

[1] THEORY OF THE RF SHEATH IN THE REGIME BETWEEN THE ION AND ELECTRON-PLASMA FREQUENCIES [J].