Composition analysis of nickel silicide formed from evaporated and sputtered nickel for microsystem devices

被引：8

作者：

Bhaskaran, M.

Sriram, S.

du Plessis, J.

Holland, A. S.

机构：

[1] RMIT Univ, Microelect & Mat Technol Ctr, Sch Elect & Comp Engn, Melbourne, Vic 3001, Australia

[2] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 08期

关键词：

D O I：

10.1049/el:20070203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nickel silicide (NiSi) is highly suitable for microsystem fabrication, exhibiting suitable mechanical properties and good resistance to bulk micromachining etchants. Conditions for the formation of nickel silicide by vacuum annealing thin films of nickel deposited on silicon substrates are investigated. Nickel silicide thin films formed using sputtered and evaporated nickel films were analysed using Auger electron spectroscopy, which has shown that evaporated thin films of nickel tend to form nickel silicide more readily and with less thermal effort.

引用

页码：479 / 480

页数：2