Study of the current-voltage characteristics of n-on-p junction fabricated by proton-implanted molecular beam epitaxial Hg1-xCdxTe

被引：7

作者：

Chen, GB ^{[1
]}

Li, ZF

Cai, WY

He, L

Hu, XN

Lu, W

Shen, XC

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Tech, Joint Open Lab Ion Beam, Shanghai 200050, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 06期

关键词：

current-voltage characteristic; HgCdTe film; proton implantation; p-n junction;

D O I：

10.7498/aps.52.1496

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Large area n-on-p structures of p-n junction with different proton implantation doses are fabricated on the moleculer beam epitaxial grown HgCdTe films for mid-infrared wavelength region. Current-voltage characteristics of the p-n junction are measured at 77K. The zero-bias resistance-area product (R(0)A) of 312.50Omega.cm(2) is obtained when the proton implantation dose is 2 x 10(15) cm(-2), and R(0)A increases to 490Omega.cm(2) after annealing at low temperatures.

引用

页码：1496 / 1499

页数：4

共 10 条

[1] MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS [J].