Electrical, optical and structural properties of aluminum doped cadmium oxide thin films prepared by spray pyrolysis technique

被引：69

作者：

Kumaravel, R. ^{[1
]}

Menaka, S. ^{[1
]}

Snega, S. Regina Mary ^{[1
]}

Ramamurthi, K. ^{[1
]}

Jeganathan, K. ^{[2
]}

机构：

[1] Bharathidasan Univ, Crystal Growth & Thin Film Lab, Sch Phys, Tiruchirappalli 620024, Tamil Nadu, India

[2] Bharathidasan Univ, Ctr Nanosci & Nanotechnol, Sch Phys, Tiruchirappalli 620024, Tamil Nadu, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 122卷 / 2-3期

关键词：

Thin films; CdO; Spray pyrolysis; Atomic force microscopy; Electrical properties; TRANSPARENT CONDUCTING OXIDES; OXYGEN PARTIAL-PRESSURE; CDO; MICROSTRUCTURE;

D O I：

10.1016/j.matchemphys.2010.03.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conducting aluminum doped cadmium oxide (CdO:Al) thin films were deposited by spray pyrolysis method on glass substrates for various concentrations of aluminum (1-5 wt.%). CdO:Al films were characterized using different techniques such as X-ray diffraction (XRD), atomic force microscopy, optical transmittance and Hall measurement. XRD analysis showed that CdO films exhibit cubic crystal structure with (2 0 0) preferred orientation. A minimum resistivity of 3.4 x 10(-4) Omega cm with carrier concentration of 4.12 x 10(20) cm(-3) is achieved when the CdO film is doped with 3 wt.% Al. The band gap value increases with doping and reaches a maximum of 2.53 eV when doping level is 3 wt.% and then decreases for higher Al doping concentration. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：444 / 448

页数：5

共 48 条

[1] A chemical method for the preparation of thin films of CdO and ZnO [J].