Wideband Techniques for Outphasing Power Amplifiers

被引：32

作者：

Holzer, Kyle D. ^{[1
,2
]}

Yuan, Wen ^{[2
,3
]}

Walling, Jeffrey S. ^{[2
]}

机构：

[1] L3 Technol, Salt Lake City, UT 84112 USA

[2] Univ Utah, Salt Lake City, UT 84112 USA

[3] Hermes Microvis, San Jose, CA 95131 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2018年 / 65卷 / 09期

基金：

美国国家科学基金会;

关键词：

Outphasing; power amplifiers; PAs; wideband; Gallium Nitride (GaN); EXTRA-ELEMENT THEOREM; BROAD-BAND; DESIGN; COMBINER; PREDISTORTION; AMPLIFICATION; TRANSMITTERS; MODULATION; BANDWIDTH; SIGNALS;

D O I：

10.1109/TCSI.2018.2800041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a wideband, high-power amplifier that achieves an output power of 20 W with a bandwidth greater than one octave in the L and S bands is presented. Two similar to 10 W Class AB PAs are implemented with Gallium Nitride-high electron mobility transistor devices and a low loaded-Q matching network to achieve wideband performance. High power added efficiency (PAE) is achieved by combining outphased saturated power amplifiers using a wideband isolated combiner. We introduce new analysis detailing proper selection of the isolation resistance in isolated outphasing combiners. The impedance transforming Wilkinson combiner is designed to interface the system with a 50-Omega load. The L-S band (1.2 similar to 2.5 GHz) amplifier was simulated, fabricated, and characterized. The fabricated HPA provides a peak output power of 43 dBm, gain of > 15 dB with a peak PAE of > 40% across the band. A 10 MHz, 64 QAM, long-term evolution signal is measured and achieves ACLR < -30 dBc, EVM = 4.8%-rms at an average output power and efficiency of 39.3 dBm and 33.1%, respectively.

引用

页码：2715 / 2725

页数：11

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