Design Considerations on Field-Stop Layer Processing in a Trench-Gate IGBT

被引：0

作者：

Alessandria, Antonio ^{[1
]}

Fragapane, Leonardo ^{[1
]}

Morale, Giuseppe ^{[1
]}

机构：

[1] STMicroelectronis Srl, Catania, Italy

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

IGBT; Design; Simulation; Power semiconductor device;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In recent years a new device concept appeared in the IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the Field-Stop layer. In this paper we fixed some considerations about a proper design of this layer. Some simulated and real electrical characteristics of a trench-gate emitter-implanted IGBT will be shown and correlated to the Field-Stop layer process parameters.

引用

页码：4038 / 4043

页数：6