Transport properties and origin of ferromagnetism in (Ga,Mn)As

被引：1056

作者：

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

Shen, A ^{[1
]}

Sugawara, Y ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 98077, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.57.R2037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport properties of p-type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the p-d exchange between holes and Mn 3d spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga,Mn)As has its origin in the RKKY interaction mediated by holes.

引用

页码：R2037 / R2040

页数：4

共 21 条

[1]

ALTSHULER BL, 1956, JETP LETT, V16, P45

[2]

Aminov T. G., 1980, Journal de Physique Colloque, V41, pC5/155, DOI 10.1051/jphyscol:1980526

[3] POLARISATION DE CHARGE (OU DE SPIN) AU VOISINAGE DUNE IMPURETE DANS UN ALLIAGE [J].

DEGENNES, PG .

JOURNAL DE PHYSIQUE ET LE RADIUM, 1962, 23 (10) :630-636

[4]

GAJ JA, 1988, SEMICONDUCTOR SEMIME, V25

[5] Observation of a ferromagnetic transition induced by two-dimensional hole gas in modulation-doped CdMnTe quantum wells [J].

Haury, A ;

Wasiela, A ;

Arnoult, A ;

Cibert, J ;

Tatarenko, S ;

Dietl, T ;

dAubigne, YM .

PHYSICAL REVIEW LETTERS, 1997, 79 (03) :511-514

[6]

HURD CM, 1980, HALL EFFECT ITS APPL, P43

[7] A THEORY OF METALLIC FERROMAGNETISM AND ANTIFERROMAGNETISM ON ZENERS MODEL [J].

KASUYA, T .

PROGRESS OF THEORETICAL PHYSICS, 1956, 16 (01) :45-57

[8] ON COMPENSATION AND CONDUCTIVITY MODELS FOR MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURE [J].

LOOK, DC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3148-3151

[9] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[10] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

← 1 2 3 →