All Fiber Narrow Linewidth High Power Bismuth Doped Fiber Amplifier at 1179 nm

被引：0
|
作者：
Kalita, Mridu P. [1 ]
Yoo, Seongwoo [1 ]
Sahu, Jayanta [1 ]
机构：
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
来源：
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年
关键词：
LASER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the performance of Bi-doped fiber amplifier at 1179 nm, in both low and high input signal regime, when pumped at 1090 nm. The amplifier efficiency and the saturation power both depend on the fiber cooling, (C) 2009 Optical Society of America
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页码：990 / 991
页数：2
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