Strategies of RC delay reduction in 45 nm BEOL technology

被引：12

作者：

Kudo, H. ^{[1
]}

Ochimizu, H. ^{[1
]}

Tsukune, A. ^{[1
]}

Okano, S. ^{[1
]}

Naitou, K. ^{[2
]}

Sakamoto, M. ^{[1
]}

Takesako, S. ^{[2
]}

Shirasu, T. ^{[2
]}

Asneil, A. ^{[2
]}

Idani, N. ^{[2
]}

Sugimoto, K. ^{[2
]}

Ozaki, S. ^{[1
]}

Nakata, Y. ^{[1
]}

Owada, T. ^{[2
]}

Watatani, H. ^{[2
]}

Ohara, N. ^{[2
]}

Ohtsuka, N. ^{[1
]}

Sunayama, M. ^{[1
]}

Sakai, H. ^{[2
]}

Oryoji, M. ^{[1
,2
]}

Akiyama, S. ^{[2
]}

Iwata, H. ^{[2
]}

Yamamoto, H. ^{[2
]}

Shimoda, Y. ^{[2
]}

Yao, T. ^{[2
]}

Suda, S. ^{[1
]}

Suzuki, T. ^{[1
]}

Sakai, S. ^{[1
]}

Kitada, H. ^{[1
]}

Amari, S. ^{[2
]}

Tabira, T. ^{[1
]}

Matsuura, A. ^{[1
]}

Iba, Y. ^{[2
]}

Mizushima, Y. ^{[1
]}

Matsuyama, H. ^{[2
]}

Suzuki, Y. ^{[2
]}

Shimizu, N. ^{[2
]}

Yanai, K. ^{[2
]}

Nakaishi, M. ^{[2
]}

Futatsugi, T. ^{[1
]}

Hanyu, I. ^{[1
]}

Nakamura, T. ^{[1
]}

Sugii, T. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, 50 Fuchigami, Tokyo 1970833, Japan

[2] Fujitsu Ltd, Tokyo 1970833, Japan

来源：

PROCEEDINGS OF THE IEEE 2007 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2007年

关键词：

D O I：

10.1109/IITC.2007.382383

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has' a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86% compared to that listed in the ITRS 2006 update.

引用

页码：178 / +

页数：2