Majority carriers in pyrite thin films:: an analysis based on Seebeck and Hall coefficient measurements

被引：22

作者：

Ares, JR

Ferrer, IJ

Sánchez, CR

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] CNRS, Lab Chim Met Terres Rares, ISCS, F-94320 Thiais, France

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

thin film; pyrite; Seeback coefficient; Hall coefficient;

D O I：

10.1016/S0040-6090(03)00247-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Determination of the sign of the majority charge carriers in pyrite thin films has become a difficult task due to the contradictory results obtained by thermoelectric methods and Hall coefficient measurements. An explanation for this behaviour is proposed on the basis of calculations accomplished by considering a two band conduction mechanism operating in the films. Point lattice defects, generated during the film growth, are considered as donor and acceptor states. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：511 / 513

页数：3