Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces

被引：11
作者：
Aureli, I
Corradini, V
Mariani, C
Placidi, E
Arciprete, F
Balzarotti, A
机构：
[1] Univ Roma La Sapienza, Inst Nazl Fis Mat, Dipartimento Fis, I-00185 Rome, Italy
[2] INFM, Natl Ctr Nanostruct & Biosyst Surfaces S3, I-41100 Modena, Italy
[3] Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00133 Rome, Italy
来源：
SURFACE SCIENCE | 2005年 / 576卷 / 1-3期
关键词：
InAs; HRUPS; surface states;
D O I：
10.1016/j.susc.2004.12.004
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The (4 x 2) epitaxial InAs(001) surface grown by molecular beam epitaxy and subjected to different surface treatments, namely amorphous As-de-capping and ion-bombardment annealing (IBA), is investigated by high-resolution angular-resolved UV photoelectron spectroscopy. Both treatments produce a semiconducting surface, ruling out the presence of metallic In aggregates. Binding energy shifts of 0.2-0.3 eV are measured for the valence-band levels of the IBA surface with respect to the de-capped surface, implying an important influence of the surface treatment on the subsurface region. The line-shape of the In-4d core levels, which consists of two different In-related surface doublets, is discussed in view of the recently proposed structural models based on dimers formation. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：123 / 130
页数：8
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