Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface

被引：10
作者：
Fiori, Alexandre [1 ]
Teraji, Tokuyuki [1 ]
Koide, Yasuo [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 10期
基金：
日本学术振兴会;
关键词：
diamond; Schottky diode; tungsten carbide; TUNGSTEN CARBIDE; STABILITY; DIODES;
D O I：
10.1002/pssa.201431216
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Rectification abilities of tungsten carbide (WC) Schottky-barrier diodes fabricated on p-type diamond were confirmed up to 800K. In this study, electrical properties were used to support the investigation of the WC/diamond interface reaction under elevated temperature. Before heating above 500K, the interface was not thermally stable. The interface has been stabilized by mean of an annealing under vacuum in the 550-600K range. This treatment has produced diodes exhibiting large rectification factors of 10(6) at 3V, and low leakage currents of 10(-12)amps at 100V in the blocked state, when the operation temperature was below 600K. However, rectification factors were gradually worsened, while the temperature was exceeding 600K.
引用
收藏
页码：2363 / 2366
页数：4
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