Study on threshold behavior of operation voltage in metal filament-based polymer memory

被引：70
作者：
Joo, Won-Jae
Choi, Tae-Lim
Lee, Kwang-Hee
Chung, Youngsu
机构：
[1] Samsung Adv Inst Technol, Display Device & Mat Lab, Suwon 440600, South Korea
[2] Cheil Ind Inc, Elect Chem Mat Div, Uiwang, Gyeonggi, South Korea
[3] Samsung Adv Inst Technol, AE Ctr, Suwon 440600, South Korea
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2007年 / 111卷 / 27期
关键词：
D O I：
10.1021/jp0684933
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In the metal filament formation-based organic memory, the positive voltage application over the threshold electric field strength (170 MV/m) is necessary for the filament formation in Cu/P3HT/Al device. By the positive voltage application, the copper ions are generated and drifted into polymer layer, which is clearly confirmed by the secondary ion mass spectroscopy. Also, the field strength (100 MV/m) required for the drift process could be independently determined with a new pulse operation method. We could conclude that the threshold field strength of 170 MV/m was determined by the ionization process of copper. Furthermore, the dependence of the positive field strength and the temperature on the memory behavior was studied.
引用
收藏
页码：7756 / 7760
页数：5
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