Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure

被引：9

作者：

Dyer, G. C. ^{[1
]}

Shi, X. ^{[1
,2
]}

Olson, B. V. ^{[1
]}

Hawkins, S. D. ^{[1
]}

Klem, J. F. ^{[1
]}

Shaner, E. A. ^{[1
]}

Pan, W. ^{[1
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 01期

关键词：

TOPOLOGICAL INSULATOR; GRAPHENE; PHOTOCONDUCTIVITY; PLASMONS; GAP;

D O I：

10.1063/1.4939234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states. (C) 2016 AIP Publishing LLC.

引用

页数：5

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