Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates.

被引：1

作者：

Caliebe, Marian ^{[1
]}

Tandukar, Sushil ^{[1
]}

Cheng, Zongzhe ^{[1
]}

Hocker, Matthias ^{[4
]}

Han, Yisong ^{[3
]}

Meisch, Tobias ^{[1
]}

Heinz, Dominik ^{[1
]}

Huber, Florian ^{[4
]}

Bauer, Sebastian ^{[4
]}

Plettl, Alfred ^{[2
]}

Humphreys, Colin ^{[3
]}

Thonke, Klaus ^{[4
]}

Scholz, Ferdinand ^{[1
]}

机构：

[1] Univ Ulm, Inst Optoelect, Albert Einstein Allee 45, D-89081 Ulm, Germany

[2] Univ Ulm, Inst Solid State Phys, Albert Einstein Allee 11, D-89081 Ulm, Germany

[3] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

[4] Univ Ulm, Semicond Phys Grp, Inst Quantum Matter, Albert Einstein Allee 45, D-89081 Ulm, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 440卷

基金：

英国工程与自然科学研究理事会;

关键词：

Parasitic doping; Metalorganic vapor phase epitaxy; Pre-structured sapphire substrates; Gallium nitride; Piezoelectric materials; Semipolar; ORIENTED GAN; POLARIZATION;

D O I：

10.1016/j.jcrysgro.2016.01.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this article, the influence of the trench period and depth of pre-structured r-plane sapphire substrates on the metalorganic vapor phase epitaxy (MOVPE) growth of (11 (2) over bar2) GaN is investigated. We found that a larger trench period is beneficial for a small basal plane stacking fault (BSF) and threading dislocation (TD) density on the wafer surface, because it facilitates a better formation of a coalescence gap, which effectively blocks defects from penetrating to the surface. Further, the amount of BSFs emerging from the c-wings of the uncoalesced GaN stripes is directly related to the trench period. With the help of in situ deposited marker layers we studied the development of the individual GaN stripes and observed that the trench depth and hence the ratio of the sapphire c-plane area relative to the total surface area heavily influences the coalescence process and defect development. Moreover, it is observed that the parasitic donor concentration increases for samples with smoother wafer surface. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：69 / 75

页数：7

共 23 条

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