Graphene electrodynamics in the presence of the extrinsic spin Hall effect

被引:1
|
作者
Huang, Chunli [1 ,2 ]
Chong, Y. D. [1 ]
Vignale, Giovanni [3 ]
Cazalilla, Miguel A. [2 ,4 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[3] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
[4] Natl Ctr Theoret Sci, Hsinchu 30013, Taiwan
基金
新加坡国家研究基金会;
关键词
RELAXATION-TIME APPROXIMATION; DIELECTRIC FUNCTION; PLASMONS; SEMICONDUCTORS; DIFFUSION;
D O I
10.1103/PhysRevB.93.165429
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We extend the electrodynamics of two-dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling (SOC) by proximity. The formalism extends previous semiclassical treatments of the SHE to the nonlocal dynamical regime. Within a particle-number conserving approximation, we compute the conductivity, dielectric function, and spin Hall angle in the small frequency and wave vector limit. The spin Hall angle is found to decrease with frequency and wave number, but it remains comparable to its zero-frequency value around the frequency corresponding to the Drude peak. The plasmon dispersion and linewidth are also obtained. The extrinsic SHE affects the plasmon dispersion in the long wavelength limit, but not at large values of the wave number. This result suggests an explanation for the rather similar plasmonic response measured in exfoliated graphene, which does not exhibit the SHE, and graphene grown by chemical vapor deposition, for which a large SHE has been recently reported. Our theory also lays the foundation for future experimental searches of SOC effects in the electrodynamic response of two-dimensional electron gases with SOC disorder.
引用
收藏
页数:11
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