Strain-induced vertical ordering effects of islands in LPCVD-grown Si1-xGex/Si-bilayer structures on Si(001)

被引：0
作者：
Tillmann, K
Rahmati, B
Trinkaus, H
Jager, W
Hartmann, A
Loo, R
Vescan, L
Urban, K
机构：
[1] Forschungszentrum Julich GMBH, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Forschungszentrum Julich GMBH, Inst Schicht & Ionentech, D-52425 Julich, Germany
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期
关键词：
EPITAXIAL ISLANDS; SIGE DOTS; GE; MULTILAYERS; RELAXATION; SI(100); MISFIT;
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The phenomenon of vertically ordered S1-xGex-islands during LPCVD growth of Si1-xGex/Si-bilayers is examined by transmission electron microscopy. With decreasing thickness of a Si-interlayer separating two Si1-xGex-layers completely vertically ordered Si1-xGex-islands are observed. This correlation behaviour is quantitatively described in terms of a finite element method based model to predict local island nucleation probabilities. Likewise a lattice fringe analysis of HRTEM images substantiates strong compositional modifications compared to the aspired stoichiometry of the Si1-xGex-layers. Despite the observed geometrical uniformity of the Si1-xGex-islands the corresponding photoluminescence spectra show significant peak shifts dependent on the silicon interlayer thickness, which essentially result from compositional fluctuations of the islands.
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页码：343 / 348
页数：6
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