Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

被引：2
|
作者：
Men, LQ [1 ]
Gan, FX [1 ]
机构：
[1] Acad Sinica, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
来源：
OPTICS COMMUNICATIONS | 1998年 / 145卷 / 1-6期
关键词：
phase change thin film; optical storage; short-wavelength recording; TEM; temperature field simulation;
D O I：
10.1016/S0030-4018(97)00442-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Short-wavelength optical recording characteristics of phase change GTeSb(2)Te(4) thin film are reported. Microstructural changes that occur in a GeSb2Te4 thin film after recording have been observed and discussed with the temperature field analysis. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：21 / 26
页数：6
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