Influence of surface roughness of Bragg reflectors on resonance characteristics of solidly-mounted resonators

被引：22

作者：

Chung, Chung-Jen ^{[1
]}

Chen, Ying-Chung

Cheng, Chien-Chuan

Wei, Ching-Liang

Kao, Kuo-Sheng

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[2] De Lin Inst Technol, Dept Elect Engn, Taipei, Taiwan

[3] SHU TE Univ, Dept Comp & Commun, Kaohsiung, Taiwan

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2007年 / 54卷 / 04期

关键词：

THIN-FILM RESONATORS; W/SIO2; MULTILAYERS; INJECTION-LASERS; FABRICATION; FILTERS; DEVICES;

D O I：

10.1109/TUFFC.2007.313

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

The solidly mounted resonator (SMR) is fabricated using planar processes from a piezoelectric layer sandwiched between two electrodes upon Bragg reflectors, which then are attached to a substrate. To transform the effective acoustic impedance of the substrate to a near zero value, the Bragg reflectors are composed of alternating high and low acoustic impedance layers of quarter-wavelength thickness. This paper presents the influence of Bragg reflector surface roughness on the resonance characteristics of an SMR. Originally, an AIN/Al multilayer is used as the Bragg reflector. The poor surface roughness of this Bragg reflector results in a poor SMR frequency response. To improve the surface roughness of Bragg reflectors, a molybdenum (Mo)/titanium (Ti) multilayer with a similar coefficient of thermal expansion is adopted. By controlling deposition parameters, the surface roughness of the Bragg reflector is improved, and better resonance characteristics of SMR are obtained.

引用

页码：802 / 808

页数：7

共 26 条

[1] RF-MEMS filters manufactured on silicon: Key facts about Bulk-Acoustic-Wave technology [J].

Aigner, R .

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, :157-161

[2]

Aigner R, 2003, IEEE MTT-S, P2001, DOI 10.1109/MWSYM.2003.1210552

[3] Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films [J].

Bjurström, J ;

Rosén, D ;

Katardjiev, I ;

Yanchev, VM ;

Petrov, I .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2004, 51 (10) :1347-1353

[4]

CHENG CC, 2000, P IEEE S APPL FERR, P439

[5] HILLOCK FORMATION DURING ELECTROMIGRATION IN CU AND AL THIN-FILMS - 3-DIMENSIONAL GRAIN-GROWTH [J].

GLADKIKH, A ;

LEREAH, Y ;

GLICKMAN, E ;

KARPOVSKI, M ;

PALEVSKI, A ;

SCHUBERT, J .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1214-1215

[6] Analysis of piezoelectric thin film resonators with acoustic quarter-wave multilayers [J].

Kanbara, H ;

Kobayashi, H ;

Nakamura, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (5B) :3049-3053

[7] Synthesis and surface acoustic wave properties of AlN films deposited on LiNbO3 substrates [J].

Kao, KS ;

Cheng, CC ;

Chen, YC .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2002, 49 (03) :345-349

[8] Improved resonance characteristics by thermal annealing of W/SiO2 multi-layers in film bulk acoustic wave resonator devices [J].

Kim, DH ;

Yim, MY ;

Chai, DK ;

Park, JS ;

Yoon, GA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A) :1545-1550

[9] AlN-based film bulk acoustic resonator devices with W/SiO2 multilayers reflector for rf bandpass filter application [J].

Kim, SH ;

Kim, JH ;

Park, HD ;

Yoon, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1164-1168

[10] Fabrication of piezoelectric thin film resonators with acoustic quarter-wave multilayers [J].

Kobayashi, H ;

Ishida, Y ;

Ishikawa, K ;

Doi, A ;

Nakamura, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5B) :3455-3457

← 1 2 3 →